N-channel enhancement mode power MOSFET in a 5-pin USV (SOT) package. Features a 20V drain-source voltage, 0.4A continuous drain current, and 800mOhm maximum drain-source resistance at 4V. Dual common source configuration with gull-wing lead shape for surface mounting. Operating temperature range from -55°C to 150°C.
PackageUSV
MountingSurface Mount
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Technical Specifications
Toshiba SSM5N05FU(BRA) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | USV |
| Lead Shape | Gull-wing |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 0.65 |
| Package Weight (g) | 0.006 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Common Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 0.4A |
| Material | Si |
| Maximum Drain Source Resistance | 800@4VmOhm |
| Typical Input Capacitance @ Vds | 22@3VpF |
| Maximum Power Dissipation | 300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM5N05FU(BRA) Datasheet
Download the complete datasheet for Toshiba SSM5N05FU(BRA) to view detailed technical specifications.
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