N-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 0.4A continuous drain current. This 5-pin USV package, a lead-frame SMT type with gull-wing leads, offers a 0.65mm pin pitch and dimensions of 2mm (L) x 1.25mm (W) x 0.9mm (H). The dual common source configuration utilizes silicon material with a maximum drain-source resistance of 800 mOhm at 4V and a typical input capacitance of 22pF at 3V. Maximum power dissipation is 300mW, with an operating temperature range of -55°C to 150°C.
PackageUSV
MountingSurface Mount
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Technical Specifications
Toshiba SSM5N05FU(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
USV
Lead Shape
Gull-wing
Pin Count
5
PCB
5
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
0.65
Package Weight (g)
0.006
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Common Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
0.4A
Material
Si
Maximum Drain Source Resistance
800@4VmOhm
Typical Input Capacitance @ Vds
22@3VpF
Maximum Power Dissipation
300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba SSM5N05FU(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM5N05FU(TE85L,F) to view detailed technical specifications.
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