N-channel enhancement mode MOSFET, 30V drain-source voltage, 0.1A continuous drain current. Features dual common source configuration in a 5-pin ESV SOT package with flat leads for surface mounting. This small signal transistor offers a maximum drain-source resistance of 4000 mOhm at 4V and a typical input capacitance of 7.8pF at 3V. Operating temperature range from -55°C to 150°C.
PackageESV
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba SSM5N15FE(TPL3) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
ESV
Lead Shape
Flat
Pin Count
5
PCB
5
Package Length (mm)
1.6
Package Width (mm)
1.2
Package Height (mm)
0.55
Seated Plane Height (mm)
0.55
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Common Source
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
4000@4VmOhm
Typical Input Capacitance @ Vds
7.8@3VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM5N15FE(TPL3) Datasheet
Download the complete datasheet for Toshiba SSM5N15FE(TPL3) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.