P-channel enhancement mode MOSFET, 20V drain-source voltage, 0.1A continuous drain current. Features dual common source configuration with two elements per chip. Surface mountable in a 5-pin ESV package (SOT family) with a 1.6mm x 1.2mm x 0.55mm plastic body. Operates across a -55°C to 150°C temperature range.
PackageESV
MountingSurface Mount
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Technical Specifications
Toshiba SSM5P16FE(BRA) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | ESV |
| Lead Shape | Flat |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Package Height (mm) | 0.55 |
| Seated Plane Height (mm) | 0.55 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Common Source |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Process Technology | pi-MOS VI |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 0.1A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1.1V |
| Maximum Drain Source Resistance | 8000@4VmOhm |
| Typical Input Capacitance @ Vds | 11@3VpF |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM5P16FE(BRA) Datasheet
Download the complete datasheet for Toshiba SSM5P16FE(BRA) to view detailed technical specifications.
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