Dual N/P-channel enhancement mode silicon power MOSFET in a 6-pin UF surface mount package. Features flat leads, 0.65mm pin pitch, and compact dimensions (2mm x 1.7mm x 0.7mm). Offers 20V/0.05A for N-channel and 12V/1A for P-channel, with maximum drain source resistance of 10000mΩ (N-ch) and 160mΩ (P-ch). Operates within a temperature range of -55°C to 150°C.
PackageUF
MountingSurface Mount
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Technical Specifications
Toshiba SSM6E01TU(BRA) technical specifications.
General
Package/Case
UF
Lead Shape
Flat
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.7
Package Height (mm)
0.7
Seated Plane Height (mm)
0.7
Pin Pitch (mm)
0.65
Package Weight (g)
0.007
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Maximum Drain Source Voltage
20@N Channel|12@P ChannelV
Maximum Gate Source Voltage
10@N Channel|±12@P ChannelV
Maximum Continuous Drain Current
0.05@N Channel|1@P ChannelA
Material
Si
Maximum Drain Source Resistance
[email protected]@N Channel|160@4V@P ChannelmOhm
Typical Input Capacitance @ Vds
11@3V@N Channel|310@10V@P ChannelpF
Maximum Power Dissipation
500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM6E01TU(BRA) Datasheet
Download the complete datasheet for Toshiba SSM6E01TU(BRA) to view detailed technical specifications.
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