The SSM6E03TU is a dual N|P channel enhancement MOSFET from Toshiba, packaged in a UF surface mount package. It has a maximum drain source voltage of 20V and a maximum continuous drain current of 1.8A for Q1 and 0.1A for Q2. The device has a maximum power dissipation of 500mW and operates over a temperature range of -55°C to 150°C.
PackageUF
MountingSurface Mount
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Technical Specifications
Toshiba SSM6E03TU technical specifications.
General
| Package Family Name | UF |
| Package/Case | UF |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.7 |
| Package Height (mm) | 0.7 |
| Package Weight (g) | 0.007 |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10@N Channel|±8@P ChannelV |
| Maximum Continuous Drain Current | 1.8@Q 1|0.1@Q 2A |
| Material | Si |
| Maximum Drain Source Resistance | 3000@4V@N Channel|144@4V@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 9.3@3V@N Channel|335@10V@P ChannelpF |
| Maximum Power Dissipation | 500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba SSM6E03TU Datasheet
Download the complete datasheet for Toshiba SSM6E03TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.