P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 6A continuous drain current. This single-element transistor utilizes U-MOS IV process technology and is housed in a compact 6-pin UF surface-mount package (2mm x 1.7mm x 0.7mm) with a 0.65mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 22.5 mOhm at 4.5V and a typical gate charge of 23.1 nC at 4.5V. Operating temperature range spans from -55°C to 150°C.
PackageUF
MountingSurface Mount
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Technical Specifications
Toshiba SSM6J414TU technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package/Case | UF |
| Lead Shape | Flat |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.7 |
| Package Height (mm) | 0.7 |
| Seated Plane Height (mm) | 0.7 |
| Pin Pitch (mm) | 0.65 |
| Package Weight (g) | 0.007 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS IV |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 6A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1650@10VpF |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM6J414TU Datasheet
Download the complete datasheet for Toshiba SSM6J414TU to view detailed technical specifications.
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