Surface mount N-channel and P-channel MOSFET with 30V drain-to-source voltage. Features 200mA continuous drain current and 700mΩ maximum drain-source on-resistance. Includes 85ns turn-on and turn-off delay times, 20pF input capacitance, and 300mW maximum power dissipation. Packaged in SOT-363-6 for tape and reel distribution.
PackageSOT-363-6
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Toshiba SSM6L09FUTE85LF technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | -1.8V |
| Input Capacitance | 20pF |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 700mR |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 85ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6L09FUTE85LF Datasheet
Download the complete datasheet for Toshiba SSM6L09FUTE85LF to view detailed technical specifications.
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