N-channel silicon enhancement mode MOSFET, dual configuration, designed for small signal applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.1A. Packaged in a 6-pin US (SOT-363) surface-mount case with dimensions of 2mm x 1.25mm x 0.9mm. Operates across a temperature range of -55°C to 150°C.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba SSM6N04FU(T5LHLS,F technical specifications.
General
Package/Case
US
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Package Weight (g)
0.0068
Mounting
Surface Mount
Jedec
SOT-363
Configuration
Dual
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
10V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
Typical Input Capacitance @ Vds
11@3VpF
Maximum Power Dissipation
200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba SSM6N04FU(T5LHLS,F Datasheet
Download the complete datasheet for Toshiba SSM6N04FU(T5LHLS,F to view detailed technical specifications.
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