Quick Jump:
Technical Specifications
Toshiba SSM6N15AFU,LF technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 13.5pF |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Rds On Max | 3.6R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6N15AFU,LF Datasheet
Download the complete datasheet for Toshiba SSM6N15AFU,LF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
