N-channel enhancement mode silicon MOSFET, dual configuration, designed for small signal applications. Features a maximum drain-source voltage of 30V and a maximum continuous drain current of 0.1A. Housed in a 6-pin ES surface-mount package with flat leads, measuring 1.6mm x 1.2mm with a 0.5mm pin pitch. Offers a maximum drain-source resistance of 4000 mOhm at 4V and typical input capacitance of 7.8pF at 3V. Operates within a temperature range of -55°C to 150°C.
PackageES
MountingSurface Mount
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Technical Specifications
Toshiba SSM6N15FE(TE85L,F) technical specifications.
General
Package/Case
ES
Lead Shape
Flat
Pin Count
6
PCB
6
Package Length (mm)
1.6
Package Width (mm)
1.2
Seated Plane Height (mm)
0.55
Pin Pitch (mm)
0.5
Package Weight (g)
0.003
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
4000@4VmOhm
Typical Input Capacitance @ Vds
7.8@3VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba SSM6N15FE(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM6N15FE(TE85L,F) to view detailed technical specifications.
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