N-channel enhancement mode silicon MOSFET, dual configuration, designed for small signal applications. Features a 30V drain-source voltage, 0.1A continuous drain current, and a maximum gate-source voltage of ±20V. Packaged in a 6-pin US (SOT-363) surface mount configuration with dimensions of 2mm x 1.25mm x 0.9mm. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 200mW.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba SSM6N15FU(BRA) technical specifications.
General
| Package/Case | US |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Weight (g) | 0.0068 |
| Mounting | Surface Mount |
| Jedec | SOT-363 |
| Configuration | Dual |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.1A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Drain Source Resistance | 4000@4VmOhm |
| Typical Input Capacitance @ Vds | 7.8@3VpF |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba SSM6N15FU(BRA) Datasheet
Download the complete datasheet for Toshiba SSM6N15FU(BRA) to view detailed technical specifications.
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