The SSM6N16FUTE85LF is a 2-channel N-channel MOSFET from Toshiba with a maximum drain to source voltage of 20V and continuous drain current of 100mA. It features a maximum Rds on resistance of 3 ohms and is packaged in the SOT-363-6 surface mount package. The device is suitable for use in a variety of applications including power management and switching circuits. Operating temperature range is not specified, but the device is suitable for use in surface mount applications.
PackageSOT-363-6
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Toshiba SSM6N16FUTE85LF technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Resistance | 5.2R |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 1.1V |
| Input Capacitance | 9.3pF |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3R |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6N16FUTE85LF Datasheet
Download the complete datasheet for Toshiba SSM6N16FUTE85LF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.