The SSM6N36FE,LM(T) is a 2 N-Channel FET with a maximum drain to source voltage of 20V and continuous drain current of 500mA. It features an input capacitance of 46pF and a maximum power dissipation of 150mW. The device is packaged in cut tape and is designed for surface mount applications.
MountingSurface Mount
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Technical Specifications
Toshiba SSM6N36FE,LM(T technical specifications.
General
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Input Capacitance | 46pF |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 630mR |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba SSM6N36FE,LM(T Datasheet
Download the complete datasheet for Toshiba SSM6N36FE,LM(T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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