The SSM6N37FE,LM is a 2 N-Channel MOSFET with a maximum drain to source breakdown voltage of 20V and a maximum drain to source resistance of 5.6 ohms. It features a maximum power dissipation of 150mW and a maximum continuous drain current of 250mA. The device is packaged in a SOT-563 surface mount package and is available in tape and reel packaging. The operating temperature range is not specified.
PackageSOT-563
MountingSurface Mount
PolarityN-CHANNEL
Power150mW
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Technical Specifications
Toshiba SSM6N37FE,LM technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 5.6R |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 12pF |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150mW |
| Rds On Max | 2.2R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6N37FE,LM Datasheet
Download the complete datasheet for Toshiba SSM6N37FE,LM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.