Automotive N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 4A continuous drain current. This dual-configuration transistor utilizes U-MOS VII-H process technology and is housed in a compact 2x2mm UDFN EP package with a 0.65mm pin pitch. Surface mountable with a maximum power dissipation of 2000mW, it operates across a wide temperature range of -55°C to 150°C.
PackageUDFN EP
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba SSM6N55NU technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | UDFN EP |
| Package Description | Micro Dual Flat Pack No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 2 |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | U-MOS VII-H |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 46@10VmOhm |
| Typical Input Capacitance @ Vds | 280@15VpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM6N55NU Datasheet
Download the complete datasheet for Toshiba SSM6N55NU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.