Quick Jump:
Technical Specifications
Toshiba SSM6N55NU,LF technical specifications.
General
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 280pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 46mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6N55NU,LF Datasheet
Download the complete datasheet for Toshiba SSM6N55NU,LF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
