Dual N-channel MOSFET featuring 30V drain-source breakdown voltage and 4A continuous drain current. Offers low on-resistance with Rds On Max of 46mR at a gate-source voltage of 10V. Maximum power dissipation is 1W, with input capacitance at 310pF. Packaged in UDFN6 for surface-mount applications, supplied on tape and reel.
PolarityN-CHANNEL
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Technical Specifications
Toshiba SSM6N57NU,LF technical specifications.
General
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 82mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 310pF |
| Max Power Dissipation | 1W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 46mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6N57NU,LF Datasheet
Download the complete datasheet for Toshiba SSM6N57NU,LF to view detailed technical specifications.
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