
The SSM6N7002BFU(T5L,F is a 2 N-Channel FET with a maximum drain to source voltage of 60V and a continuous drain current of 200mA. It has a maximum power dissipation of 300mW and an input capacitance of 17pF. This FET is designed for surface mount applications and is packaged in a cut tape format.
Toshiba SSM6N7002BFU(T5L,F technical specifications.
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | 2 N-Channel |
| Input Capacitance | 17pF |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 2.1R |
| RoHS | Compliant |
Download the complete datasheet for Toshiba SSM6N7002BFU(T5L,F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.