P-channel, enhancement mode MOSFET for small signal applications. Features a 20V maximum drain-source voltage and 0.2A continuous drain current. Dual transistor configuration within a 6-pin US package (SOT-363) with surface mount capability. Offers a maximum drain-source resistance of 3300 mOhm at 4V and a typical input capacitance of 27pF at 3V. Operates across a wide temperature range from -55°C to 150°C.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba SSM6P05FU(T5RKENW) technical specifications.
General
Package/Case
US
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Package Weight (g)
0.0068
Mounting
Surface Mount
Jedec
SOT-363
Configuration
Dual
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
0.2A
Material
Si
Maximum Drain Source Resistance
3300@4VmOhm
Typical Input Capacitance @ Vds
27@3VpF
Maximum Power Dissipation
300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM6P05FU(T5RKENW) Datasheet
Download the complete datasheet for Toshiba SSM6P05FU(T5RKENW) to view detailed technical specifications.
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