P-channel, enhancement mode MOSFET for small signal applications. Features a 30V drain-source voltage rating and a 0.2A continuous drain current. Housed in a 6-pin SOT-363 (US) surface-mount package with dimensions of 2mm x 1.25mm x 0.9mm. Dual transistor configuration with a maximum power dissipation of 300mW and an operating temperature range of -55°C to 150°C.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba SSM6P09FU(TE85L,F) technical specifications.
General
Package/Case
US
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Package Weight (g)
0.0068
Mounting
Surface Mount
Jedec
SOT-363
Configuration
Dual
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.2A
Material
Si
Maximum Drain Source Resistance
2700@10VmOhm
Typical Input Capacitance @ Vds
22@5VpF
Maximum Power Dissipation
300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba SSM6P09FU(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM6P09FU(TE85L,F) to view detailed technical specifications.
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