The SSM6P47NU,LF is a P-channel MOSFET with a drain to source breakdown voltage of -20V and a maximum power dissipation of 1W. It features a continuous drain current of 4A and a drain to source resistance of 242mR. The device is packaged in a surface mount package and is available on tape and reel. The operating temperature range is not specified, but it is suitable for use in a variety of applications. The SSM6P47NU,LF is manufactured by Toshiba and is a discrete semiconductor device.
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
Toshiba SSM6P47NU,LF technical specifications.
General
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 242mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 290pF |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 95mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6P47NU,LF Datasheet
Download the complete datasheet for Toshiba SSM6P47NU,LF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.