NPN Darlington transistor array featuring 35V collector-emitter voltage and 0.5A continuous DC collector current. This through-hole component offers 1000mW maximum power dissipation and a minimum DC current gain of 1000. Housed in a 16-pin PDIP package with a 2.54mm pin pitch, it operates within a -30°C to 75°C temperature range.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba TD62002P(J) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
DIP
Package/Case
PDIP
Package Description
Plastic Dual In Line Package
Lead Shape
Through Hole
Pin Count
16
PCB
16
Package Length (mm)
19.75(Max)
Package Width (mm)
6.4
Package Height (mm)
3.5
Seated Plane Height (mm)
4.15
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
MS-001BB
Type
NPN
Configuration
Array 7
Number of Elements per Chip
7
Maximum Collector-Emitter Voltage
35V
Maximum Continuous DC Collector Current
0.5A
Maximum Power Dissipation
1000mW
Maximum Collector-Emitter Saturation Voltage
1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mAV
Minimum DC Current Gain
1000@350mA@2V
Min Operating Temperature
-30°C
Max Operating Temperature
75°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TD62002P(J) Datasheet
Download the complete datasheet for Toshiba TD62002P(J) to view detailed technical specifications.
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