Octal NPN Darlington transistor array featuring 100V collector-emitter voltage and 0.4A continuous collector current. This through-hole component offers 1470mW maximum power dissipation and a minimum DC current gain of 1000. Packaged in an 18-pin PDIP with a maximum length of 25.1mm, it operates within a temperature range of -40°C to 85°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba TD62082CP(J) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
DIP
Package/Case
PDIP
Package Description
Plastic Dual In Line Package
Lead Shape
Through Hole
Pin Count
18
PCB
18
Package Length (mm)
25.1(Max)
Package Width (mm)
6.4
Package Height (mm)
3.5
Seated Plane Height (mm)
4.15
Package Material
Plastic
Mounting
Through Hole
Jedec
MS-001AC
Type
NPN
Configuration
Octal
Number of Elements per Chip
8
Maximum Collector-Emitter Voltage
100V
Maximum Continuous DC Collector Current
0.4A
Maximum Power Dissipation
1470mW
Maximum Collector-Emitter Saturation Voltage
1.1@100mA|1.3@200mA|1.6@350mAV
Minimum DC Current Gain
1000@350mA@2V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TD62082CP(J) Datasheet
Download the complete datasheet for Toshiba TD62082CP(J) to view detailed technical specifications.
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