Quad NPN/PNP Darlington transistor array, featuring 50V collector-emitter voltage and 1.5A continuous collector current. This through-hole component offers 2700mW maximum power dissipation and a 1.8V/1.3V collector-emitter saturation voltage. Housed in a 16-pin PDIP package with a 2.54mm pin pitch, it operates within a -40°C to 85°C temperature range.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba TD62308APG(J,S) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
DIP
Package/Case
PDIP
Package Description
Plastic Dual In Line Package
Lead Shape
Through Hole
Pin Count
16
PCB
16
Package Length (mm)
19.75(Max)
Package Width (mm)
6.4
Package Height (mm)
3.5
Seated Plane Height (mm)
4.15
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
MS-001BB
Type
NPN|PNP
Configuration
Quad
Number of Elements per Chip
4
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
1.5A
Maximum Power Dissipation
2700mW
Maximum Collector-Emitter Saturation Voltage
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TD62308APG(J,S) Datasheet
Download the complete datasheet for Toshiba TD62308APG(J,S) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.