NPN Darlington transistor featuring a hex configuration with six elements per chip. This through-hole component offers a maximum collector-emitter voltage of 20V and a continuous DC collector current of 0.7A. It boasts a maximum power dissipation of 1400mW and a minimum DC current gain of 3000. Housed in a 16-pin PDIP plastic package with a 2.54mm pin pitch, it operates within a temperature range of -40°C to 85°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba TD62309P(5,J,VFS) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
DIP
Package/Case
PDIP
Package Description
Plastic Dual In Line Package
Lead Shape
Through Hole
Pin Count
16
PCB
16
Package Length (mm)
19.75(Max)
Package Width (mm)
6.4
Package Height (mm)
3.5
Seated Plane Height (mm)
4.15
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
MS-001BB
Type
NPN
Configuration
Hex
Number of Elements per Chip
6
Maximum Collector-Emitter Voltage
20V
Maximum Continuous DC Collector Current
0.7A
Maximum Power Dissipation
1400mW
Maximum Collector-Emitter Saturation Voltage
0.8@450mA|0.45@200mAV
Minimum DC Current Gain
3000@300mA@4V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
S0562
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TD62309P(5,J,VFS) Datasheet
Download the complete datasheet for Toshiba TD62309P(5,J,VFS) to view detailed technical specifications.
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