NPN digital bipolar transistor array featuring 7 configurations, designed for through-hole mounting. This component offers a maximum collector-emitter voltage of 35V and a maximum continuous DC collector current of 200mA. It is housed in a 16-pin PDIP package with a 2.54mm pin pitch, measuring 19.75mm in length. Key specifications include a maximum power dissipation of 1000mW, a typical input resistor of 2.7 kOhm, and a minimum DC current gain of 50. Operating temperature range is from -40°C to 85°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba TD62503P(J,ND) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
DIP
Package/Case
PDIP
Package Description
Plastic Dual In Line Package
Lead Shape
Through Hole
Pin Count
16
PCB
16
Package Length (mm)
19.75(Max)
Package Width (mm)
6.4
Package Height (mm)
3.5
Seated Plane Height (mm)
4.15
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
MS-001BB
Type
NPN
Configuration
Array 7
Maximum Collector-Emitter Voltage
35V
Maximum Continuous DC Collector Current
200mA
Maximum Power Dissipation
1000mW
Typical Input Resistor
2.7kOhm
Typical Resistor Ratio
0.27
Maximum Collector-Emitter Saturation Voltage
0.2@1mA@10mA|0.8@3mA@150mAV
Minimum DC Current Gain
50@10mA@10V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TD62503P(J,ND) Datasheet
Download the complete datasheet for Toshiba TD62503P(J,ND) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.