NPN Bipolar Junction Transistor (BJT) quint configuration, featuring a 35V maximum collector-emitter voltage and 0.2A maximum DC collector current. This surface-mount device is housed in a 16-pin SOP (Small Outline Package) with gull-wing leads, measuring 10.5mm x 4.4mm x 1.5mm. It offers a minimum DC current gain of 50 at 10mA/10V and a maximum power dissipation of 625mW, operating within a temperature range of -40°C to 85°C.
PackageSOP
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba TD62507FG(5,EL) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 16 |
| PCB | 16 |
| Package Length (mm) | 10.5(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.9(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Quint |
| Number of Elements per Chip | 5 |
| Maximum Collector Base Voltage | 50V |
| Maximum Collector-Emitter Voltage | 35V |
| Maximum DC Collector Current | 0.2A |
| Maximum Power Dissipation | 625mW |
| Minimum DC Current Gain | 50@10mA@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TD62507FG(5,EL) Datasheet
Download the complete datasheet for Toshiba TD62507FG(5,EL) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.