NPN digital bipolar junction transistor (BJT) featuring a quad common emitter configuration. Designed for through-hole mounting, this component is housed in a 9-pin Single In Line Package (SIP) with a 2.54mm pin pitch. It offers a maximum collector-emitter voltage of 25V and a maximum continuous DC collector current of 150mA, with a maximum power dissipation of 750mW. Key internal specifications include a typical input resistor of 2.7 kOhm and a minimum DC current gain of 60. Operating temperature range spans from -40°C to 85°C.
PackageSIP
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba TD62553S(STA) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 9 |
| PCB | 9 |
| Package Length (mm) | 22.78(Max) |
| Package Width (mm) | 3.2 |
| Package Height (mm) | 5.6 |
| Seated Plane Height (mm) | 7.9(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Quad Common Emitter |
| Maximum Collector-Emitter Voltage | 25V |
| Maximum Continuous DC Collector Current | 150mA |
| Maximum Power Dissipation | 750mW |
| Typical Input Resistor | 2.7kOhm |
| Typical Resistor Ratio | 0.135 |
| Minimum DC Current Gain | 60@10mA@5V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | S0562 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TD62553S(STA) Datasheet
Download the complete datasheet for Toshiba TD62553S(STA) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.