Octal NPN digital transistor with 50V collector-emitter voltage and 50mA continuous collector current. Features 2.7 kOhm typical input resistance and 0.27 typical resistor ratio. Housed in an 18-pin PDIP plastic through-hole package (MS-001AC) measuring 24.6mm x 6.4mm x 3.5mm. Maximum power dissipation is 960mW, with operating temperatures from -40°C to 85°C.
PackagePDIP
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba TD62583AP(F) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | PDIP |
| Package Description | Plastic Dual In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 18 |
| PCB | 18 |
| Package Length (mm) | 24.6 |
| Package Width (mm) | 6.4 |
| Package Height (mm) | 3.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | MS-001AC |
| Type | NPN |
| Configuration | Octal |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 50mA |
| Maximum Power Dissipation | 960mW |
| Typical Input Resistor | 2.7kOhm |
| Typical Resistor Ratio | 0.27 |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@16mA|[email protected]@30mAV |
| Minimum DC Current Gain | 70@30mA@4V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TD62583AP(F) Datasheet
Download the complete datasheet for Toshiba TD62583AP(F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.