NPN Bipolar Junction Transistor (BJT) with octal configuration, featuring a 50V collector-emitter voltage and 0.2A maximum collector current. This through-hole component is housed in an 18-pin PDIP package (MS-001AC) with a maximum power dissipation of 1470mW. It offers a minimum DC current gain of 70 at 10mA and 10V, operating within a temperature range of -40°C to 85°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba TD62595AP(5) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | PDIP |
| Package Description | Plastic Dual In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 18 |
| PCB | 18 |
| Package Length (mm) | 24.6 |
| Package Width (mm) | 6.4 |
| Package Height (mm) | 3.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | MS-001AC |
| Type | NPN |
| Configuration | Octal |
| Number of Elements per Chip | 8 |
| Maximum Collector Base Voltage | 50V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.2A |
| Maximum Power Dissipation | 1470mW |
| Minimum DC Current Gain | 70@10mA@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TD62595AP(5) Datasheet
Download the complete datasheet for Toshiba TD62595AP(5) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.