The Toshiba TH58NYG3S0HBAI4 is an industrial-grade EEPROM memory IC with a maximum operating temperature of 85 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It features a 63-pin TFBGA package with a bottom terminal position and measures 9mm in width and 11mm in length. The device operates within a supply voltage range of 1.7V to 1.95V and has a memory capacity of 1073741824 words. It is designed for parallel access and is suitable for industrial applications.
Toshiba TH58NYG3S0HBAI4 technical specifications.
| Max Operating Temperature | 85 |
| Number of Terminals | 63 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B63 |
| Width | 9 |
| Length | 11 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.95 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Number of Words | 1073741824 |
| Number of Words Code | 1000000000 |
| Memory IC Type | EEPROM |
| Parallel/Serial | PARALLEL |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Toshiba TH58NYG3S0HBAI4 to view detailed technical specifications.
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