The TK024N60Z1 is a Silicon N-Channel MOS field-effect transistor utilizing the DTMOSVI 600V series process with a super junction structure. It is designed for high-efficiency switching power supplies, featuring ultra-low on-resistance and high-speed switching properties with lower capacitance. It is specifically optimized for data center servers, industrial switched-mode power supplies (SMPS), and solar inverters.
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Technical Specifications
Toshiba TK024N60Z1,S1F technical specifications.
General
| Drain-Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 80A |
| Drain-Source On-Resistance (Rds On) Max | 0.024Ohms |
| Gate-Source Voltage (Vgss) | ±30V |
| Power Dissipation (Pd) | 506W |
| Gate Threshold Voltage (Vth) | 3 to 4V |
| Total Gate Charge (Qg) | 140nC |
| Maximum Operating Temperature | 150°C |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK024N60Z1,S1F Datasheet
Download the complete datasheet for Toshiba TK024N60Z1,S1F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.