The TK080N60Z1 is a 600V N-channel power MOSFET utilizing Toshiba's DTMOSVI series process with a super junction structure. It is designed for high-efficiency switching power supplies, including servers, industrial equipment, and photovoltaic power conditioners. It features high-speed switching properties and low drain-source on-resistance to reduce conduction losses and heat generation.
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Technical Specifications
Toshiba TK080N60Z1,S1F technical specifications.
General
| Drain-Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 30A |
| Drain-Source On-Resistance (Rds On) Max | 80mOhms |
| Gate-Source Threshold Voltage (Vgs th) | 4V |
| Total Gate Charge (Qg) Typ | 43nC |
| Power Dissipation (Pd) | 192W |
| Operating Temperature Max | 150C |
| Transistor Polarity | N-Channel |
Compliance
| RoHS | Compliant |
| REACH | Compliant |
Datasheet
Toshiba TK080N60Z1,S1F Datasheet
Download the complete datasheet for Toshiba TK080N60Z1,S1F to view detailed technical specifications.
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