N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 263A continuous drain current. This single-element silicon transistor utilizes U-MOS VIII-H process technology and is housed in a 3-pin TO-220SIS through-hole package with a tab. Key specifications include a low drain-source on-resistance of 2.7mOhm at 10V, typical gate charge of 140nC at 10V, and typical input capacitance of 10500pF at 30V. Maximum power dissipation is 45000mW, with an operating temperature range of -55°C to 150°C.
PackageTO-220SIS
MountingThrough Hole
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Technical Specifications
Toshiba TK100A06N1 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220SIS |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 17 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS VIII-H |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 263A |
| Material | Si |
| Maximum Drain Source Resistance | 2.7@10VmOhm |
| Typical Gate Charge @ Vgs | 140@10VnC |
| Typical Gate Charge @ 10V | 140nC |
| Typical Input Capacitance @ Vds | 10500@30VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TK100A06N1 Datasheet
Download the complete datasheet for Toshiba TK100A06N1 to view detailed technical specifications.
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