The TK100E10N1,S1X is a power MOSFET from Toshiba with a maximum drain to source voltage of 100V and continuous drain current of 100A. It is packaged in a TO-220-3 case and is designed for through hole mounting. The device has a maximum power dissipation of 255W and an on-resistance of 3.4 milliohms. It is available in quantities of 50 and is packaged in a rail or tube format.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Toshiba TK100E10N1,S1X technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 8.8nF |
| Max Power Dissipation | 255W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 3.4mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK100E10N1,S1X Datasheet
Download the complete datasheet for Toshiba TK100E10N1,S1X to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.