N-channel enhancement mode power MOSFET, 40V drain-source voltage, 100A continuous drain current. Features U-MOS IV process technology, 3-pin TO-220SM(W) surface mount package with tab. Low 3mOhm drain-source resistance at 10V, 102nC gate charge, and 4500pF input capacitance. Operates from -55°C to 175°C with 180W maximum power dissipation.
PackageTO-220SM(W)
MountingSurface Mount
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Technical Specifications
Toshiba TK100F04K3(SM,Q) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220SM(W) |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 9 |
| Package Height (mm) | 3.5 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS IV |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 100A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 3@10VmOhm |
| Typical Gate Charge @ Vgs | 102@10VnC |
| Typical Gate Charge @ 10V | 102nC |
| Typical Input Capacitance @ Vds | 4500@10VpF |
| Maximum Power Dissipation | 180000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TK100F04K3(SM,Q) Datasheet
Download the complete datasheet for Toshiba TK100F04K3(SM,Q) to view detailed technical specifications.
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