N-channel power MOSFET designed for high-voltage applications, featuring a 600V drain-source voltage (Vdss) and a continuous drain current (ID) of 100A. This through-hole component offers a low drain-source on-resistance (Rds On) of 18mΩ at 100A, with a maximum power dissipation of 797W. It operates within a temperature range of -55°C to 150°C and includes input capacitance of 15nF. RoHS compliant and packaged in a TO3P(L) package.
Capacitance1.5E-08F
Resistance0.018R
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Toshiba TK100L60W,VQ technical specifications.
General
| Capacitance | 1.5E-08F |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 125ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 15nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 797W |
| Mount | Through Hole |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 18mR |
| Resistance | 0.018R |
| RoHS Compliant | Yes |
| Series | DTMOSIV |
| Turn-Off Delay Time | 690ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK100L60W,VQ Datasheet
Download the complete datasheet for Toshiba TK100L60W,VQ to view detailed technical specifications.
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