The TK125A60Z1S4X is an N-channel enhancement mode silicon MOSFET from the DTMOS series. It features high-speed switching properties with low drain-source on-resistance and is designed for applications in switching power supplies. The device is housed in a TO-220SIS through-hole package.
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Technical Specifications
Toshiba TK125A60Z1S4X technical specifications.
General
| Drain-Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 20A |
| Drain-Source On-Resistance (Rds On) | 125mOhms |
| Gate-Source Voltage (Vgss) | 30V |
| Gate-Source Threshold Voltage (Vgs th) | 4V |
| Power Dissipation (Pd) | 40W |
| Gate Charge (Qg) | 28nC |
| Maximum Operating Temperature | 150°C |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK125A60Z1S4X Datasheet
Download the complete datasheet for Toshiba TK125A60Z1S4X to view detailed technical specifications.
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