The TK12A50D(Q,M) is a power transistor from Toshiba with a maximum drain to source voltage of 500V and continuous drain current of 12A. It features a TO-220-3 package and is designed for through hole mounting. The transistor has a maximum power dissipation of 45W and an on-resistance of 520 milliohms. It is available in a packaging quantity of 50 units per rail or tube.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Toshiba TK12A50D(Q,M) technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance | 1.35nF |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 520mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK12A50D(Q,M) Datasheet
Download the complete datasheet for Toshiba TK12A50D(Q,M) to view detailed technical specifications.
No datasheet is available for this part.