The Toshiba TK12A55D(STA4,Q,M) is a TO-220-3 packaged MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 45W and a continuous drain current of 12A. The device features a drain to source voltage of 550V and a gate to source voltage of 30V. The input capacitance is 1.55nF and the fall time is 15ns. It is suitable for through hole mounting and is available in a rail or tube packaging format.
PackageTO-220-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba TK12A55D(STA4,Q,M) technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.55nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 570mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK12A55D(STA4,Q,M) Datasheet
Download the complete datasheet for Toshiba TK12A55D(STA4,Q,M) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
