The TK12E60W,S1VX is a TO-220 packaged N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 11.5A and a maximum power dissipation of 110W. The device has a drain to source breakdown voltage of 600V and a drain to source resistance of 300mR. It also features an input capacitance of 890pF and a gate to source voltage of 30V.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Toshiba TK12E60W,S1VX technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 890pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| Turn-Off Delay Time | 85ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK12E60W,S1VX Datasheet
Download the complete datasheet for Toshiba TK12E60W,S1VX to view detailed technical specifications.
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