The Toshiba TK16A60W,S4VX is a high-power N-channel MOSFET with a drain to source breakdown voltage of 600V and a continuous drain current of 15.8A. It has a maximum power dissipation of 40W and a drain to source resistance of 160mR. The device is packaged in a TO-220-3 package and is mounted through a hole. It operates over a temperature range of -40°C to 150°C.
PackageTO-220-3
Capacitance1.35E-09F
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Toshiba TK16A60W,S4VX technical specifications.
General
| Capacitance | 1.35E-09F |
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.35nF |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Rds On Max | 190mR |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK16A60W,S4VX Datasheet
Download the complete datasheet for Toshiba TK16A60W,S4VX to view detailed technical specifications.
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