Toshiba
TK16E60W,S1VX(S
Toshiba TK16E60W,S1VX(S N-channel MOSFET Transistor, 15.8 A, 600 V, 3-Pin TO-220
PackageTO-220
MountingThrough Hole
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Technical Specifications
Toshiba TK16E60W,S1VX(S technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 15.8A |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.1mm |
| Input Capacitance | 1.35nF |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 50ns |
| Width | 4.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK16E60W,S1VX(S Datasheet
Download the complete datasheet for Toshiba TK16E60W,S1VX(S to view detailed technical specifications.
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