N-channel enhancement mode power MOSFET, silicon, 600V drain-source voltage, 20A continuous drain current, and 190mΩ maximum drain-source resistance at 10V. Features DTMOS process technology, a single element per chip configuration, and a typical gate charge of 30nC at 10V. Packaged in a 3-pin TO-220NIS through-hole configuration with a 2.54mm pin pitch, this plastic package has dimensions of 10mm (L) x 4.5mm (W) x 15mm (H) and supports up to 45W power dissipation. Operating temperature range is -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba TK20A60T(Q) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 2.8(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
DTMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
20A
Material
Si
Maximum Drain Source Resistance
190@10VmOhm
Typical Gate Charge @ Vgs
30@10VnC
Typical Gate Charge @ 10V
30nC
Typical Input Capacitance @ Vds
1580@10VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TK20A60T(Q) Datasheet
Download the complete datasheet for Toshiba TK20A60T(Q) to view detailed technical specifications.
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