The Toshiba TK20A60U(Q) is a N-CHANNEL MOSFET with a continuous drain current of 20A and a drain to source breakdown voltage of 600V. It has a gate to source voltage of 30V and a threshold voltage of 3V. The device can handle a maximum power dissipation of 45W and operates within a temperature range of -55°C to 150°C. It is packaged in a SC case and is available in a lead-free version.
PackageSC
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Toshiba TK20A60U(Q) technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 12ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba TK20A60U(Q) Datasheet
Download the complete datasheet for Toshiba TK20A60U(Q) to view detailed technical specifications.
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