The Toshiba TK20V60W,LVQ is a single N-channel MOSFET with a maximum drain to source voltage of 600V and continuous drain current of 20A. It features a drain to source resistance of 170mR and an input capacitance of 1.68nF. The device is rated for operation over a temperature range of -55°C to 150°C and has a maximum power dissipation of 156W. The TK20V60W,LVQ is packaged in a DFN package and is available in tape and reel packaging for surface mount applications.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Toshiba TK20V60W,LVQ technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.68nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 170mR |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK20V60W,LVQ Datasheet
Download the complete datasheet for Toshiba TK20V60W,LVQ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.