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Technical Specifications
Toshiba TK2Q60D(Q) technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.5mm |
| Input Capacitance | 280pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 4.3R |
| Series | p-MOSVII |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK2Q60D(Q) Datasheet
Download the complete datasheet for Toshiba TK2Q60D(Q) to view detailed technical specifications.
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