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Technical Specifications
Toshiba TK32E12N1,S1X technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 120V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 120V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 98W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 98W |
| Rds On Max | 13.8mR |
| Turn-Off Delay Time | 43ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK32E12N1,S1X Datasheet
Download the complete datasheet for Toshiba TK32E12N1,S1X to view detailed technical specifications.
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