N-channel enhancement mode power MOSFET, fabricated with U-MOS VIII-H process technology. Features 80V drain-source voltage and 55A continuous drain current. Housed in a TO-220 package with 3 through-hole pins and a tab, offering 12.2mOhm maximum drain-source resistance at 10V. Maximum power dissipation is 72000mW, with an operating temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Toshiba TK35E08N1 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.16 |
| Package Width (mm) | 4.45 |
| Package Height (mm) | 8.59 |
| Seated Plane Height (mm) | 18.94 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS VIII-H |
| Maximum Drain Source Voltage | 80V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 55A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 12.2@10VmOhm |
| Typical Gate Charge @ Vgs | 25@10VnC |
| Typical Gate Charge @ 10V | 25nC |
| Typical Input Capacitance @ Vds | 1700@40VpF |
| Maximum Power Dissipation | 72000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Toshiba TK35E08N1 Datasheet
Download the complete datasheet for Toshiba TK35E08N1 to view detailed technical specifications.
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